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mrf6p21190hr6 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for w--cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn--pcs/cellular radio and wll applications. ? typical 2--carrier w--cdma performance: v dd =28volts,i dq = 1900 ma, p out = 44 watts avg., f = 2112.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 15.5 db drain efficiency ? 26.5% im3 @ 10 mhz offset ? --37 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? --40 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 190 watts cw output power features ? characterized with series equival ent large--signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? rohs compliant ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +68 vdc gate--source voltage v gs --0.5, +12 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 190 w cw case temperature 72 c, 44 w cw r jc 0.25 0.27 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. lifetime bu y last order 1 jul 11 last ship 30 jun 12 document number: mrf6p21190hr6 rev. 5,12/2010 freescale semiconductor technical data mrf6p21190hr6 2110--2170 mhz, 44 w avg., 28 v 2xw--cdma lateral n--channel rf power mosfet case 375d--05, style 1 ni--1230 ? freescale semiconductor, inc., 2004--2006, 2008, 2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf6p21190hr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds =68vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 250 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (3) (v dd =28vdc,i d = 1900 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain--source on--voltage (1) (v gs =10vdc,i d =2.2adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1,2) reverse transfer capacitance (v ds =28vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.5 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1900 ma, p out = 44 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5mhz offset. im3 measured in 3.84 mhz channel bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 14.5 15.5 17.5 db drain efficiency d 25 26.5 ? % intermodulation distortion im3 ? -- 3 7 -- 3 5 dbc adjacent channel power ratio acpr ? -- 4 0 -- 3 8 dbc input return loss irl ? -- 1 5 -- 9 db 1. each side of device measured separately. 2. part is internally matched both on input and output. 3. measurements made with device i n push--pull configuration. lifetime bu y last order 1 jul 11 last ship 30 jun 12
mrf6p21190hr6 3 rf device data freescale semiconductor figure 1. mrf6p21190hr6 test circuit schematic z15, z16 0.289 x 0.712 microstrip z17, z18 0.127 x 0.200 microstrip z19, z20 0.288 x 0.067 microstrip z21 0.088 x 0.067 microstrip z22 1.830 x 0.067 microstrip z23 1.140 x0.114 microstrip z24 0.850 x 0.066 microstrip pcb taconic rf--35, 0.030 , r =3.5 z1 0.850 x 0.067 microstrip z2 1.140 x0.114 microstrip z3 1.830 x 0.067 microstrip z4 0.088 x 0.067 microstrip z5, z6 0.250 x 0.067 microstrip z7, z8 0.324 x 0.178 microstrip z9, z10 0.143 x 0.655 microstrip z11, z12 0.111 x 0.655 microstrip z13, z14 0.124 x 0.712 microstrip rf input c3 r1 c4 + c2 v bias r2 b2 b1 c5 c6 + z6 z8 z10 z12 c1 z5 z7 z9 z11 c7 z1 z2 z3 dut c9 r3 c10 + c8 r4 b4 b3 c11 c12 + c14 + c15 c19 c16 c17 c18 + c20 + c21 + v supply z14 z16 z18 z20 c13 z13 z15 z17 z19 c22 c23 + c24 c28 c25 c26 c27 + c29 + c30 + v supply rf output z23 z24 v bias z4 z22 z21 table 5. mrf6p21190hr6 test circuit component designations and values part description part number manufacturer b1, b2, b3, b4 rf beads 2743019447 fair--rite c1, c7 30 pf chip capacitors atc100b300jt500xt atc c2, c8, c15, c24 6.8 pf chip capacitors atc100b6r8ct500xt atc c3, c9, c18, c27 1k pf chip capacitors atc100b102jt50xt atc c4, c10 1 f, 50 v tantalum chip capacitors t491c105k050at kemet c5,c11,c17,c26 0.1 f chip capacitors cdr33bx104akwt kemet c6, c12 100 f, 50 v electrolytic capacitors, radial eeefk1h101p panasonic c13, c22 43 pf chip capacitors atc100b430jt500xt atc c14, c19, c20, c23, c28, c29 22 f, 35 v tantalum chip capacitors t491x226k035at kemet c16, c25 0.56 f chip capacitors c1825c564j5rac kemet c21, c30 470 f, 63 v electrolytic capacitors, radial 477kxm063m illinois capacitor r1, r3 1k , 1/4 w chip resistors crcw12061001fkea vishay r2, r4 12 , 1/4 w chip resistors crcw120612r0fkea vishay lifetime bu y last order 1 jul 11 last ship 30 jun 12
4 rf device data freescale semiconductor mrf6p21190hr6 figure 2. mrf6p21190hr6 test circuit component layout -- + -- -- + + -- c6 + r1 c5 c4 c3 c2 r2 b1 b2 c1 c7 r4 b3 b4 c8 c9 c10 c11 r3 c12 c15 c14 c16 c17 c18 c21 c19 c20 c13 c22 c28 c29 c23 c24 c25 c26 c27 c30 cut out area mrf6p21190 rev 2 freescale has begun the transition of marking printed circuit b oards (pcbs) with the freesca le semiconductor signature/- logo. pcbs may have either motorola or freescale markings dur ing the transition period. these changes will have no impact on form, fit or function of the current product. lifetime bu y last order 1 jul 11 last ship 30 jun 12
mrf6p21190hr6 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -- 3 0 -- 1 0 -- 1 5 -- 2 0 -- 2 5 2220 2080 irl g ps acpr im3 f, frequency (mhz) figure 3. 2--carrier w--cdma broadband performance @ p out = 44 watts avg. v dd =28vdc,p out =44w(avg.),i dq = 1900 ma 2--carrier w--cdma, 10 mhz carrier spacing 2200 2180 2160 2140 2120 2100 4 20 18 16 14 12 10 8 6 -- 5 0 40 30 20 10 -- 1 0 -- 2 0 -- 3 0 -- 4 0 d , drain efficiency (%) d 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% pr obabilit y( ccdf) g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -- 3 0 -- 1 0 -- 1 5 -- 2 0 -- 2 5 2220 2080 irl g ps acpr im3 f, frequency (mhz) figure 4. 2--carrier w--cdma broadband performance @ p out = 87 watts avg. v dd =28vdc,p out =87w(avg.),i dq = 1900 ma 2--carrier w--cdma, 10 mhz carrier spacing 2200 2180 2160 2140 2120 2100 4 20 18 16 14 12 10 8 6 -- 4 0 50 40 30 20 0 -- 1 0 -- 2 0 -- 3 0 d , drain efficiency (%) d 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% pr obabilit y( ccdf) figure 5. two--tone power gain versus output power 100 14 17 1 i dq = 2500 ma 2200 ma v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing 16.5 16 15.5 10 300 p out , output power (watts) pep g ps , power gain (db) 14.5 15 1900 ma 1600 ma 1300 ma figure 6. third order intermodulation distortion versus output power -- 4 5 -- 3 0 1 i dq = 2500 ma 1300 ma 100 -- 3 5 -- 4 0 300 -- 5 5 -- 5 0 v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing 10 p out , output power (watts) pep intermodulation d istortion (dbc) imd, third order 2200 ma 1900 ma 1600 ma lifetime bu y last order 1 jul 11 last ship 30 jun 12
6 rf device data freescale semiconductor mrf6p21190hr6 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 -- 5 5 -- 1 5 0.1 7th order two--tone spacing (mhz) v dd =28vdc,p out = 190 w (pep), i dq = 1900 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz 5th order 3rd order -- 2 0 -- 3 0 -- 4 0 -- 4 5 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 2 5 -- 3 5 figure 8. pulsed cw output power versus input power 44 58 34 p3db = 54.45 dbm (279 w) p in , input power (dbm) v dd =28vdc,i dq = 1900 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz 56 54 52 47 36 38 40 42 actual ideal p1db = 53.7 dbm (233 w) 57 48 32 p out , output power (dbm) 50 im3 (dbc), acpr (dbc) figure 9. 2--carrier w--cdma acpr, im3, power gain and drain efficiency versus output power 0--60 p out , output power (watts) avg. 30 -- 3 0 25 20 -- 3 5 15 -- 4 0 5 -- 5 0 1 10 100 -- 4 5 10 d , drain efficiency (%), g ps , power gain (db) -- 5 5 im3 d g ps acpr 300 0 18 0 60 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd =28vdc i dq = 1900 ma f = 2140 mhz 100 10 15 12 9 6 3 50 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw v dd =28v g ps , power gain (db) 500 6 18 10 16 10 8 100 12 14 24 v i dq = 1900 ma f = 2140 mhz 20 v v dd =28vdc,i dq = 1900 ma f1 = 2135 mhz, f2 = 2145 mhz 2--carrier w--cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth par = 8.5 db @ 0. 01% probab ility ( ccdf) 3 3 55 53 51 49 33 35 37 39 41 43 lifetime bu y last order 1 jul 11 last ship 30 jun 12
mrf6p21190hr6 7 rf device data freescale semiconductor typical characteristics figure 12. mttf factor versus junction temperature 250 10 8 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours when the device is operated at v dd =28vdc,p out = 44 w avg., and d = 26.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 13. ccdf w--cdma 3gpp, test model 1, 64 dpch, 67% clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 14. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw -- i m 3 i n 3.84 mhz bw +im3 in 3.84 mhz bw --acpr in 3.84 mhz bw +acpr in 3.84 mhz bw probability (%) (db) +20 +30 0 -- 1 0 -- 4 0 -- 5 0 -- 6 0 -- 7 0 -- 8 0 -- 2 0 20 515 10 0 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 2 5 -- 3 0 w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probabilit y on ccdf lifetime bu y last order 1 jul 11 last ship 30 jun 12
8 rf device data freescale semiconductor mrf6p21190hr6 figure 15. series equivalent source and load impedance f mhz z source ? z load ? 2000 2110 2140 3.43 -- j10.06 3.39 -- j6.07 3.22 -- j7.13 5.63 -- j12.88 4.36 -- j10.02 4.56 -- j8.49 v dd =28vdc,i dq = 1900 ma, p out =44wavg. z o =25 ? z load f = 2200 mhz f = 2000 mhz z source 2170 2200 3.69 -- j5.16 3.76 -- j5.45 5.11 -- j7.41 5.42 -- j6.67 f = 2000 mhz f = 2200 mhz z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network -- -- + + lifetime bu y last order 1 jul 11 last ship 30 jun 12
mrf6p21190hr6 9 rf device data freescale semiconductor package dimensions case 375d--05 issue e ni--1230 notes: 1. interpret dimensions and tolerances per asme y14.5m--1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4
10 rf device data freescale semiconductor mrf6p21190hr6 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 4 dec. 2008 ? modified data sheet to reflect rf test reduction de scribed in product and proc ess change notification number, pcn13232, p. 1, 2 ? removed lower thermal resistance and low gold plat ing bullets from features section as functionality is standard, p. 1 ? removed total device dissipation from max rati ngs table as data was redundant (information already provided in thermal characteristics table), p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use of maximum temperature will affect mttf? footnote added, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , and added ?measured in functional test?, on characteristics table, p. 2 ? removed forward transconductance from on charac teristics table as it no longer provided usable information, p. 2 ? updated part numbers in table 5, component designati ons and values, to latest rohs compliant part numbers, p. 3 ? adjusted scale for fig. 5, two--tone power gain versus output power and fig. 6, third order intermodulation distortion versus output power, to better match the device?s capabilities, p. 5 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 10 5 dec. 2010 ? corrected data sheet to reflect rf test reduction de scribed in product and proc ess change notification number, pcn13232, and product discontinuance not ification number, pcn14260, adding applicable overlay, p. 1, 2 lifetime bu y last order 1 jul 11 last ship 30 jun 12
mrf6p21190hr6 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004--2006, 2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6p21190hr6 rev. 5,12/2010

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